Vishay Semiconductors



Infrarood emitters - Hoogvermogen SurflightVCSEL 940nm 10mW/sr, +/-60deg.

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In voorraad: 7.960


7.960 Kan onmiddellijk worden verzonden


4 weken De geschatte productietijd in de fabriek voor meer dan de weergegeven hoeveelheden.
Minimum: 1   Veelvouden: 1

€ -,--
€ -,--
Op hele Spoel (Bestel in veelvouden van 3000)
Gesneden tape
MouseReel (+€ 5,00)

Prijsbepaling (EUR)

Hvh. Eenheidsprijs
Ext. Prijs
Gesneden tape / MouseReel™
€ 0,893 € 0,89
€ 0,608 € 6,08
€ 0,473 € 47,30
€ 0,443 € 221,50
€ 0,384 € 384,00
Op hele Spoel (Bestel in veelvouden van 3000)
€ 0,377 € 1.131,00
€ 0,365 € 2.190,00
€ 0,363 € 3.267,00
† € 5,00 MouseReel™-bewerkingskosten worden in uw winkelwagen toegevoegd en berekend. Het is niet mogelijk om MouseReel™-bestellingen te annuleren of te retourneren.
Productkenmerk Kenmerkwaarde
Productcategorie: Infrarood emitters - Hoogvermogen
RoHS:  Details
940 nm
10 mW/sr
120 deg
100 mA
1.45 V
180 mW
- 40 C
+ 85 C
Cut Tape
Merk: Vishay Semiconductors
Daaltijd: 10 ns
Hoogte: 0.85 mm
Verlichtingskleur: Infrared
Lengte: 2 mm
Lensvorm: Rectangular
Vochtgevoelig: Yes
Product: High Power Infrared Emitters
Producttype: IR Emitters (IR LEDs)
Stijgtijd: 10 ns
Verpakkingshoeveelheid af fabriek: 3000
Subcategorie: Infrared Data Communications
Handelsnaam: SurfLight
Type: High Speed Infrared Emitting Diode
Gezichtshoek: 120 deg
Vr - Sperspanning: 5 V
Breedte: 1.25 mm
Gewicht per stuk: 1 g

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters & Silicon PIN Photodiodes are high-speed 830nm to 950nm infrared emitters and package-matched high-speed silicon PIN photodiodes with high radiant sensitivity from 1mW/sr to 1800 mW/sr. Rise and fall times range from 2.5ns to 1000ns. Vishay offers double heterojunction infrared emitters with the lowest forward voltages on the market and highly efficient homojunction emitters. Vishay also offers the broadest selection of high-speed, low dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

Automotive IR Emitters

Vishay Automotive IR Emitters can be used in a wide range of consumer, medical, industrial, and automotive applications. These devices come in emitters or photodiodes and are also available in matching pairs. Vishay strictly adheres to the Automotive Electronics Council’s Q101 Stress Test Qualification for Automotive Grade Discrete Semiconductors. The minimum operating temperature range for discrete semiconductors per this specification is -40°C to +85°C ambient but could go up to the range of -40°C to +125°C based on the respective application and requirements (most LED applications require at least up to +100°C).

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