EP9 IGBT-gate-drive-transformatoren

EPCOS/TDK EP9 IGBT Gate Drive Transformers are compact devices built on an MnZn ferrite core with an SMD L-pin construction.These transformers offer excellent insulation, minimal coupling capacitance, and high thermal resilience. The EP9 IGBT gate drive transformers support half-bridge or push-pull topologies. These transformers feature a 2pF low coupling capacity and ≥5mm clearance distance (cumulative and core floating). The EP9 IGBT gate drive transformers operate within the 100kHz to 400kHz frequency range and -40°C to 150°C temperature range.  These transformers are RoHS compliant and AEC-Q200 qualified. The EP9 IGBT gate drive transformers are designed specifically for IGBT and FET gate driver circuits. Typical applications include isolated DC-DC converters, isolated AC-DC converters, and gate driver circuits.

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EPCOS / TDK Energie Transformators Half Bridge, Turns Ratio 1 : 28 : 1.53, EP9 IGBT Gate Drive Transformer
Gegevensblad
245In voorraad
Min.: 1
Veelv.: 1
Spoel: 250

Power Transformers SMD/SMT Single Primary Winding Dual Secondary Winding 11.45 mm 10.7 mm 10.55 mm EP9
EPCOS / TDK Energie Transformators Push Pull, Turns Ratio 1 : 2.9 : 1, EP9 IGBT Gate Drive Transformer
Gegevensblad
240In voorraad
Min.: 1
Veelv.: 1
Spoel: 250

Power Transformers SMD/SMT Single Primary Winding Dual Secondary Winding 11.45 mm 10.7 mm 10.55 mm EP9