4G/5G Low Noise Amplifiers

Infineon Technologies 4G/5G Low Noise Amplifiers are designed for LTE and 5G, covering a wide frequency range. The 4G/5G Low Noise Amplifiers gain step features the gain and linearity that can adjust to increase the dynamic system range and accommodate changing interference scenarios.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
NF - Noise Figure
Type
Mounting Style
Package/Case
Technology
P1dB - Compression Point
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ
Datasheet
11.412In Stock
Min.: 1
Mult.: 1
Reel: 15.000
1.4 GHz to 2.7 GHz 1.8 V 5.8 mA 20.2 dB 11.5 dB Low Noise Amplifiers SMD/SMT TSNP-9-2 Si - 17 dBm Reel, Cut Tape
Infineon Technologies RF Amplifier 7x LNA Bank with Output Cross-Switch for 5G
Datasheet
4.500In Stock
Min.: 1
Mult.: 1
Reel: 5.000

600 MHz to 2.7 GHz 1.2 V, 1.8 V 21 dB 0.8 dB SMD/SMT PG-WF2BGA-50-2 Reel, Cut Tape
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ
Datasheet
7.445In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 12.000

2.3 GHz to 2.7 GHz 1.1 V to 3.3 V 2.2 mA 20.3 dB 0.6 dB General Purpose Amplifiers SMD/SMT TSNP-6-10 Si - 17 dBm - 7 dBm - 40 C + 85 C Reel, Cut Tape, MouseReel
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 12.000
Mult.: 12.000
Reel: 12.000

4.4 GHz to 5 GHz 1.1 V to 2 V 5.6 mA 19 dB 1 dB Low Noise Amplifiers SMD/SMT SiGe - 19 dBm - 7 dBm - 30 C + 85 C Reel
Infineon Technologies RF Amplifier RF MMIC 3 TO 6 GHZ
Datasheet
Non-Stocked Lead-Time 20 Weeks
Min.: 12.000
Mult.: 12.000
Reel: 12.000

3.3 GHz to 4.2 GHz 1.1 V to 2 V 5.8 mA 21 dB 0.75 dB Low Noise Amplifiers SMD/SMT SiGe - 18 dBm - 7 dBm - 30 C + 85 C Reel