CoolGaN™ Drive HB 600V G5 Switches

Infineon Technologies CoolGaN™ Drive HB 600V G5 Switches integrate a half-bridge power stage featuring two 600V enhancement-mode CoolGaN switches with on-resistance options of 140mΩ, 270mΩ, or 500mΩ. These switches include built-in gate drivers and come in a compact 6mm × 8mm TFLGA-27 package. Designed for low-/medium-power applications, these switches are ideal for high-density motor drives and switch-mode power supplies (SMPS), leveraging the superior switching performance of CoolGaN technology. Infineon’s CoolGaN switches feature a robust gate structure that ensures minimal on-resistance when driven by a continuous gate current of just a few milliamps in the “on” state.

Resultaten: 4
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Infineon Technologies GaN FET's 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Gegevensblad
2.352In voorraad
Min.: 1
Veelv.: 1
: 3.000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies GaN FET's 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Gegevensblad
2.371In voorraad
Min.: 1
Veelv.: 1
: 3.000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies GaN FET's 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
Gegevensblad
2.082In voorraad
Min.: 1
Veelv.: 1
: 3.000

SMD/SMT TFLGA-27 170 mOhms - 40 C + 150 C CoolGaN
Infineon Technologies GaN FET's CoolGaN Drive HB 600 V G5
Gegevensblad
45In voorraad
3.000Verwacht 9-7-2026
Min.: 1
Veelv.: 1
: 3.000
SMD/SMT TFLGA-27 - 40 C + 150 C CoolGaN