M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

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Hvh. RoHS ECAD-model Technologie
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Montagetype
Configuratie
Collector-emitterspanning VCEO max.
Collector-emitterverzadigingsspanning
Maximale gate-emitterspanning
Doorlopende voedingsverzamelaar op 25°
Pd - Vermogensverlies
Minimale bedrijfstemperatuur
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STMicroelectronics IGBT's Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT
Gegevensblad
1.142In voorraad
Min.: 1
Veelv.: 1

Si Max247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C M Tube

STMicroelectronics IGBT's Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
Gegevensblad
1.678In voorraad
Min.: 1
Veelv.: 1

Si TO-220-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube
STMicroelectronics IGBT's Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Gegevensblad
1.218In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C M Tube

STMicroelectronics IGBT's Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Gegevensblad
Productopmerkingen
414In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics IGBT's Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
Gegevensblad
Productopmerkingen
467In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 30 A 283 W - 55 C + 175 C M Tube

STMicroelectronics IGBT's Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Gegevensblad
180In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C M Tube
STMicroelectronics IGBT's Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
Gegevensblad
599Verwacht 14-5-2026
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 50 A 326 W - 55 C + 175 C M Tube

STMicroelectronics IGBT's Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Gegevensblad
Niet in voorraad levertijd 14 weken
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.85 V - 20 V, 20 V 16 A 167 W - 55 C + 175 C M Tube