DF2BxM4ASL ESD Protection Diodes

Toshiba DF2BxM4ASL ESD Protection Diodes protect semiconductor devices like mobile device interfaces and other applications against static electricity and noise. These ESD protection diodes utilize snapback characteristics, providing low dynamic resistance and superior protective performance. The DF2BxM4ASL diodes optimum the high-speed signal application for low capacitance performance. These ESD protection diodes are stored at -55°C to 150°C. The Toshiba DF2BxM4ASL diodes function at 150°C junction temperature, 30W peak pulse power,  and 2A peak pulse current. Typical applications include smartphones, tablets, notebook PCs, and desktop PCs.