LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.

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Hvh. RoHS ECAD-model Polariteit transistor
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STMicroelectronics RF MOSFET-transistors 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
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Levertijd 52 weken
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Veelv.: 1
: 100

N-Channel Si 2.5 A 28 V 1 Ohms 945 MHz 16 dB 150 W + 200 C Through Hole LBB-4 Reel, Cut Tape
STMicroelectronics RF MOSFET-transistors RF Power LDMOS transistor HF up to 1.5 GHz
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Niet in voorraad levertijd 28 weken
Min.: 1
Veelv.: 1

N-Channel Si 9 A 90 V 1.5 GHz + 200 C SMD/SMT M243-3 Bulk