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NTBL023N065M3S

Name: onsemi NTBL023N065M3S
Brand: onsemi
SKU: 863-NTBL023N065M3S
Price: 13.87 EUR
Availability: InStock

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Mouser No:

863-NTBL023N065M3S

Mfr. No:

NTBL023N065M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TOLL 23MOHM 650V M3S

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTBL023N065M3S Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTBL023N065M3S

In Stock: 1.737

Stock:: 1.737 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	€ 13,87	€ 13,87
	€ 10,73	€ 107,30
	€ 9,89	€ 989,00
Full Reel (Order in multiples of 2000)
	€ 8,74	€ 17.480,00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	H-PSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	77 A
Rds On - Drain-Source Resistance:	32.6 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	69 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Brand:	onsemi
Configuration:	Single
Fall Time:	9.6 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	15 ns
Series:	NTBL023N065M3S
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

NTBL023N065M3S Datasheet

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

NTBL023N065M3S Silicon Carbide (SiC) MOSFETs

onsemi NTBL023N065M3S Silicon Carbide (SiC) MOSFETs are designed for demanding power applications. The onsemi NTBL023N065M3S MOSFETs feature a typical R_DS(on) of 23mΩ at V_GS = 18V, ultra-low gate charge (Q_G(tot) = 69nC), and high-speed switching with low capacitance (C_oss = 152pF). Fully tested for avalanche performance, the MOSFETs are halide-free, RoHS-compliant with Exemption 7a, and Pb-free at the second-level interconnection. Ideal for applications like Switching Mode Power Supplies (SMPS), solar inverters, Uninterruptable Power Supplies (UPS), energy storage systems, and infrastructure, these SiC MOSFETs provide robust performance for modern power management needs.