GaN FET's – Mouser Nederland

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CGHV600 6GHz GaN HEMT's

Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.
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