TPH1100CQ5 Silicon N-Channel MOSFETs

Toshiba TPH1100CQ5 Silicon N-Channel MOSFETs feature an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process. The MOSFETs offer improved reverse recovery characteristics, including a fast 36ns reverse recovery time and a 27nC typical reverse recovery charge. The TPH1100CQ5 series reduces power loss in switching power supplies, which increases efficiency in synchronous rectification applications. The Toshiba TPH1100CQ5 Silicon N-Channel MOSFETs provide low drain-source on-resistance and low leakage current ratings, making them ideal for various power and industrial applications. Typical applications include high-efficiency DC/DC converters, switching voltage regulators, motor drivers, data centers, and communication base systems.

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Hvh. RoHS ECAD-model Technologie
Montagetype
Verpakking / doos
Polariteit transistor
Aantal kanalen
Vds - Doorslagspanning van druppelbron
Id - Continue afvoerstroom
Rds On - Druppelbronweerstand
Vgs - Poort-bronspanning
Vgs th - Drempelspanning van ingangsbron
Qg - Ingangsbelasting
Maximale bedrijfstemperatuur
Pd - Vermogensverlies
Kanaalmodus
Verpakken
Toshiba MOSFET's 150V UMOS10-H SOP Advance(N) 11.1mohm
Gegevensblad
9.980In voorraad
Min.: 1
Veelv.: 1
Spoel: 5.000

Si SMD/SMT SOP-8 N-Channel 2 Channel 150 V 90 A 11.1 mOhms - 20 V, 20 V 4.5 V 38 nC + 175 C 180 W Enhancement Reel, Cut Tape
Toshiba MOSFET's 150V UMOS10-H SOP Advance(N) 14.1mohm
Gegevensblad
4.995In voorraad
Min.: 1
Veelv.: 1
Spoel: 5.000

Si SMD/SMT SOP-8 N-Channel 1 Channel 150 V 77 A 14.1 mOhms - 20 V, 20 V 4.5 V 31 nC + 175 C 170 W Enhancement Reel, Cut Tape