TRENCHSTOP™ IGBT7 S7

Infineon Technologies TRENCHSTOP™ IGBT7 S7 offers an extensive 1200V portfolio for all industrial applications requiring short circuit capability/ruggedness. The IGBT7 S7 is an efficient short-circuit rugged discrete IGBT providing at least 10% lower saturation voltage than others.

Resultaten: 12
Selecteren Afbeelding Onderdeelnummer Fabrikant Omschrijving Gegevensblad Beschikbaarheid Prijsbepaling (EUR) De resultaten in de tabel met eenheidsprijs filteren op basis van uw hoeveelheid. Hvh. RoHS ECAD-model Technologie Verpakking / doos Montagetype Configuratie Collector-emitterspanning VCEO max. Collector-emitterverzadigingsspanning Maximale gate-emitterspanning Doorlopende voedingsverzamelaar op 25° Pd - Vermogensverlies Minimale bedrijfstemperatuur Maximale bedrijfstemperatuur Reeks Verpakken


Infineon Technologies IGBT's 1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package 7In voorraad
Min.: 1
Veelv.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 21 A 106 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT's 1200 V, 100 A IGBT7 S7 in TO247PLUS-3pin package 1.594In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT's 1200 V, 120 A IGBT7 S7 in TO247PLUS-3pin package 348In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT's 1200 V, 75 A IGBT7 S7 in TO247PLUS-3pin package 313In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT's 1200 V, 100 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 1.125In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT's 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 640In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT's 1200 V, 75 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 436In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies IGBT's 1200 V, 50 A IGBT7 S7 with anti-parallel diode in TO-247 package 2.540In voorraad
Min.: 1
Veelv.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 428 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBT's 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247-4 package 251In voorraad
Min.: 1
Veelv.: 1

Si TO-247-4 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 357 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies IGBT's 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package 354In voorraad
Min.: 1
Veelv.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 36 A 176 W - 40 C + 175 C IGBT7 S7 Tube


Infineon Technologies IGBT's 1200 V, 25 A IGBT7 S7 with anti-parallel diode in TO-247 package 453In voorraad
Min.: 1
Veelv.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 55 A 250 W - 40 C + 175 C IGBT7 S7 Tube

Infineon Technologies IGBT's 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package 380In voorraad
240Verwacht 5-3-2026
Min.: 1
Veelv.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 357 W - 40 C + 175 C IGBT7 S7 Tube