Analog Devices Inc. HMC1099 10W GaN Power Amplifiers
Analog Devices HMC1099 10W GaN Power Amplifiers feature a gallium nitride (GaN), power amplifier covering a 0.01-1.1GHz instantaneous bandwidth. The HMC1099 is internally prematched to provide simple, external tuning for optimized performance across the full operating frequency range.
The HMC1099 power amplifiers deliver >10W broadband power with a typical 18.5dB signal gain and ±0.5dB gain flatness. Operating from a 28V at 100mA supply voltage, the HMC1099 power amplifiers provide a high saturated output power of 40.5dB.
These amplifiers are ideal for continuous wave (CW) or pulsed applications. With up to 69% power-added efficiency (PAE), the HMC1099 amplifiers minimize power consumption, reduce self-heating, and extend battery life in portable applications.
Features
- High saturated output power (PSAT): 40.5dBm typical
- High small-signal gain: 18.5dB typical
- High power added efficiency (PAE): 69% typical
- Instantaneous bandwidth: 0.01GHz to 1.1GHz
- Supply voltage: VDD= 28V at 100mA
- Internal prematching
- Simple and compact external tuning for optimal performance
- 32-lead, 5mm×5mm, LFCSP package: 25mm2
Applications
- Extended battery operation for public mobile radios
- Power amplifier stage for wireless infrastructures
- Test and measurement equipment
- Commercial and military radars
- General-purpose transmitter amplification
Functional Block Diagram
Associated Development Tools
Analog Devices Inc. EVAL-HMC1099 Eval Board for the HMC1099 Power Amp
Evaluates the features and capabilities of the HMC1099 Power Amplifiers.
Gepubliceerd op: 2016-04-11
| Bijgewerkt op: 2022-03-11