GeneSiC Semiconductor 650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A. 

All the 650V, 1200V, and 1700V SiC Schottky Diodes offer the advantage of paralleling devices without a thermal runaway. Additional features include low reverse recovery current, low device capacitance, and low reverse leakage current.

The SiC Schottky MPS Diodes are ideal for a wide range of applications including LED lighting, medical imaging systems, high voltage sensing, and electric vehicles.

Features

  • High avalanche (UIS) capability
  • Enhanced surge current capability
  • Superior figure of merit QC/IF
  • Low thermal resistance for faster heat dissipation
  • 175°C Maximum operating temperature
  • Temperature independent switching behavior
  • Positive temperature coefficient of VF
  • Extremely fast switching speeds

Applications

  • Boost diode in power factor correction (PFC)
  • Switched mode power supplies (SMPS)
  • AC-DC converters & DC-DC converters
  • Freewheeling / anti-parallel diode in inverters
  • Uninterruptible power supplies (UPS)
  • Solar inverters & wind energy converters
  • Induction heating & welding
  • Electric vehicles (EVs) & DC fast chargers
  • Motor drives
  • LED and HID Lighting
  • Medical imaging systems
  • High voltage sensing
  • Pulsed power
Gepubliceerd op: 2019-03-13 | Bijgewerkt op: 2023-04-18