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onsemi NTK3134N Single N-Channel Power MOSFETs

onsemi NTK3134N Single N-Channel Power MOSFETs with ESD protection are robust MOSFETs optimized for high-efficiency switching applications. Encased in a compact 3-lead SOT-723 package, the onsemi NTK3134N components deliver a low RDS(on) of 0.20Ω at 4.5V, minimizing conduction losses and enhancing thermal performance. With a drain-source voltage rating of 20V and a steady-state continuous drain current capability of 890mA (maximum), the NTK3134N MOSFETs are ideal for use in portable electronics, DC-DC converters, and load switch circuits. Fast switching speeds and low gate charge contribute to reduced power consumption and improved overall system efficiency, making these MOSFETs a reliable choice for space-constrained, power-sensitive designs.

Features

  • N-channel switch with low RDS(on)
  • 44% smaller footprint and 38% thinner than SC89
  • Low threshold levels allowing 1.5V RDS(on) rating
  • Operated at a low logic level gate drive
  • 3-lead SOT-723, Case 631AA, Style 5 package
  • Lead-free, halogen-free/BFR-free, and RoHS-compliant

Applications

  • Battery management for ultra-small portable electronics
  • Load/power switching
  • Interface switching
  • Logic level shifting

Specifications

  • Off characteristics
    • 20V minimum drain-to-source breakdown voltage
    • 18mV/°C typical drain-to-source breakdown voltage temperature coefficient
    • Zero gate voltage drain currents
      • -1.0µA maximum at +25°C
      • -2.0µA typical at +125°C
    • ±0.5µA maximum gate-to-source leakage current at ±4.5VGS
  • On characteristics
    • 0.45V to 1.2V gate threshold voltage range
    • 2.4mV/°C typical negative threshold temperature coefficient
    • 0.35Ω to 1.2Ω maximum drain-to-source on-resistance range
    • 1.6S typical forward transconductance
  • Capacitances
    • 79pF typical input capacitance
    • 13pF typical output capacitance
    • 9.0pF typical reverse transfer capacitance
  • Switching characteristics
    • 6.7ns typical turn-on delay time
    • 4.8ns typical rise time
    • 17.3ns typical turn-off delay time
    • 7.4ns typical fall time
  • Drain source diode characteristics
    • 0.75V typical forward diode voltage
    • 8.1ns typical reverse recovery time
    • 6.4ns typical charge time
    • 1.7ns typical discharge time
    • 3.0nC typical reverse recovery charge
  • 0.2Ω (at 4.5V) to 0.56Ω (at 1.5V) typical RDS(on) range
  • ±8V maximum gate-to-source voltage
  • 640mA to 890mA maximum steady-state continuous drain current range
  • 450mW maximum steady-state power dissipation
  • 1.8A maximum pulsed drain current
  • Maximum thermal resistance
    • 280°C/W junction-to-ambient steady-state
    • 228°C/W junction-to-ambient
    • 400°C/W junction-to-lead steady-state minimum pad
  • Temperatures
    • -55°C to +150°C operating junction temperature range
    • +260°C maximum lead soldering temperature

Schematic

Schematic - onsemi NTK3134N Single N-Channel Power MOSFETs
Gepubliceerd op: 2025-08-29 | Bijgewerkt op: 2025-09-08