CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

Resultaten: 42
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Rds On - Druppelbronweerstand
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Qg - Ingangsbelasting
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Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
Gegevensblad
187In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
Gegevensblad
833In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Gegevensblad
578In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

1.2 kV
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Gegevensblad
298In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 403 A 10.4 mOhms - 10 V, 25 V 5.1 V 348 nC - 55 C + 175 C 1.5 kW Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
Gegevensblad
492In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
Gegevensblad
492In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Gegevensblad
1.974In voorraad
MouseReel beschikbaar
Min.: 1
Veelv.: 1
Spoel: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Gegevensblad
649In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Gegevensblad
452In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 56 A 104 mOhms - 10 V, + 25 V 5.1 V 42.4 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Gegevensblad
405In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Gegevensblad
570In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

SMD/SMT PG-HDSOP-22-U03 N-Channel 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Gegevensblad
666In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

1.2 kV
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Gegevensblad
682In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

1.2 kV
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Gegevensblad
404In voorraad
Min.: 1
Veelv.: 1
Spoel: 750

1.2 kV
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
150In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
190In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 97 A 23 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
230In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 69 A 34 mOhms - 10 V, + 25 V 5.1 V 60 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
150In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
188In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 55 A 45 mOhms - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
161In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
237In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 38 A 69 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC 1200 V SiC MOSFET G2
Gegevensblad
198In voorraad
Min.: 1
Veelv.: 1

Through Hole PG-TO247-4-U02 N-Channel 1 Channel 1.2 kV 28 A 103 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200V, 12 mohm G2
Gegevensblad
664In voorraad
Min.: 1
Veelv.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200V, 17 mohm G2
Gegevensblad
706In voorraad
Min.: 1
Veelv.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET's CoolSiC MOSFET discrete 1200V, 26 mohm G2
Gegevensblad
683In voorraad
Min.: 1
Veelv.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC